| PART |
Description |
Maker |
| S29GL064N S29GL032N |
(S29GLxxxN) 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
SPANSION
|
| V53C318165A50 V53C318165A70 |
3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM
3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM 3.3100万16 EDO公司页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| S70GL-P |
3.0 Volt-only Page Mode Flash Memory
|
SPANSION
|
| MX23C1611 MX23C1611MC-10 MX23C1611MC-12 MX23C1611P |
5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
|
Macronix International Co., Ltd.
|
| AS4C4M4DG-7_IT AS4C4M4DG-7_XT AS4C4M4DG-6_IT AS4C4 |
4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT
|
Austin Semiconductor
|
| MX23C3211 MX23C3211MC-10 MX23C3211MC-12 MX23C3211R |
5 Volt 32-Mbit (4M x 8 / 2M x 16) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
| AT49SN6416-70CI AT49SN6416T-70CI AT49SN6416 AT49SN |
64-MEGABIT (4M X 16) BURST/PAGE MODE 1.8-VOLT FLASH MEMORY
|
ATMEL Corporation
|
| AT49SN6416T |
64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory
|
Atmel Corp.
|
| V53C316405A50 V53C316405A V53C316405A60 |
3.3 VOLT 4M x 4 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
| S29GL064M90TFIR00 S29GL064M90TFIR02 S29GL064M90TFI |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
|
SPANSION
|
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
